Related Experiment Video
Updated: Jun 1, 2026
Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
Published on: June 7, 2019
Highly efficient plasmonic interconnector based on the asymmetric junction between metal-dielectric-metal and
Seung-Yeol Lee1, Junghyun Park, Minsu Kang
1National Creative Research Center for Active Plasmonics Application Systems, Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, Gwanak-Gu Gwanakro 599, Seoul 151-744, South Korea.
Abstract:
A novel interconnection structure that is capable of transferring surface plasmon energy between two distanced metal-dielectric-metal waveguides is proposed. A numerical analysis indicates that the power transferring efficiency of the proposed structure approaches 88.5% for one millimeter of interconnection length. The main mechanism of the proposed interconnector is governed by Fabry-Pérot resonance and a multi-mode interference effect in the junction layers. A physical analysis based on the mechanism for designing an optimized structure is also provided, which could be used to modify the proposed structure.
Related Concept Videos
01:24Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:27Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...