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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Characterization of highly stable mid-IR, GaSb-based laser diodes
1Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, NY 14623, USA. aoki@lle.rochester.edu
Optics Express
|June 7, 2011
Abstract:
Highly stable room-temperature, mid-IR, GaSb-based laser diodes have been characterized at various temperatures and driver currents. Up to 54 mW of output power was demonstrated in a 3150- to 3180-nm-wavelength range with <20-nm FWHM spectral width.

