Related Experiment Video
Updated: Jun 1, 2026

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
Published on: April 16, 2017
THz emission characteristics from p/n junctions with metal lines under non-bias conditions for LSI failure analysis
Masatsugu Yamashita1, Chiko Otani, Toru Matsumoto
1RIKEN ASI, 519-1399 Aoba, Aramaki, Aoba, Sendai, Miyagi 980-0845, Japan. m-yama@riken.jp
Abstract:
We have investigated the characteristics of THz emissions from p/n junctions with metallic lines under non-bias conditions. The waveforms, spectra, and polarizations depend on the length and shape of the lines. This indicates that the transient photocurrents from p/n junctions flow into the metallic lines that emit THz waves and act as an antenna. We have successfully demonstrated the non-contact inspection of open defects of multi-layered interconnects in a large-scale integrated circuit using the laser THz emission microscope (LTEM). The p/n junctions connected to the defective interconnects can be identified by comparing the LTEM images of normal and defective circuits.
More Related Videos
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
09:26In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
Published on: June 26, 2015
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
P-N junction
Fault Types
For line-to-line faults occurring between phases B and C, the...
Bewley Lattice Diagram