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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

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Related Experiment Video

Updated: Jun 1, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

Wafer-scale graphene integrated circuit.

Yu-Ming Lin1, Alberto Valdes-Garcia, Shu-Jen Han

  • 1IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com

Science (New York, N.Y.)
|June 11, 2011
PubMed
Summary
This summary is machine-generated.

A novel wafer-scale graphene circuit integrates transistors and inductors on silicon carbide. This broadband radio-frequency mixer operates up to 10 GHz and shows excellent thermal stability, paving the way for advanced graphene electronics.

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Graphene's unique electronic properties offer potential for advanced integrated circuits.
  • Monolithic integration of diverse circuit components on a single substrate remains a challenge.

Purpose of the Study:

  • To demonstrate a wafer-scale graphene circuit with monolithically integrated components.
  • To evaluate the performance and thermal stability of the integrated radio-frequency mixer.

Main Methods:

  • Fabrication of a wafer-scale graphene circuit including graphene field-effect transistors and inductors.
  • Monolithic integration of all components onto a single silicon carbide wafer.
  • Characterization of the circuit's performance as a broadband radio-frequency mixer up to 10 GHz.

Main Results:

  • Successful demonstration of a wafer-scale graphene circuit with all components integrated.
  • The circuit functioned as a broadband radio-frequency mixer operating at frequencies up to 10 gigahertz.
  • Exhibited outstanding thermal stability, with performance degradation less than 1 decibel between 300 and 400 Kelvin.

Conclusions:

  • Monolithic integration of graphene circuits on silicon carbide is feasible.
  • The demonstrated graphene radio-frequency mixer shows high performance and thermal stability.
  • This work advances the potential for practical graphene technology with complex functionalities.