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Updated: Jun 1, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Yu-Ming Lin1, Alberto Valdes-Garcia, Shu-Jen Han
1IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com
A novel wafer-scale graphene circuit integrates transistors and inductors on silicon carbide. This broadband radio-frequency mixer operates up to 10 GHz and shows excellent thermal stability, paving the way for advanced graphene electronics.
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