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Updated: Jun 1, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Nonequilibrium quantum dynamics of a charge carrier doped into a Mott insulator
M Mierzejewski1, L Vidmar, J Bonča
1Institute of Physics, University of Silesia, 40-007 Katowice, Poland.
Abstract:
We study real-time dynamics of a charge carrier introduced into an undoped Mott insulator propagating under a constant electric field F on the t-J ladder and a square lattice. We calculate the quasistationary current. In both systems an adiabatic regime is observed followed by a positive differential resistivity (PDR) at moderate fields where the carrier mobility is determined. Quantitative differences between the ladder and two-dimensional (2D) systems emerge when at large fields both systems enter the negative differential resistivity (NDR) regime. In the ladder system Bloch-like oscillations prevail, while in two dimensions the current remains finite, proportional to 1/F. The crossover between the PDR and NDR in two dimensions is accompanied by a change of the spatial structure of the propagating spin polaron.
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