Related Experiment Video
Updated: Jun 1, 2026

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone
Published on: February 23, 2017
Impact of valley polarization on the resistivity in two dimensions
K Takashina1, Y Niida, V T Renard
1Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom.
Abstract:
We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.
Related Concept Videos
Potential Due to a Polarized Object
Dielectric Polarization in a Capacitor
Susceptibility, Permittivity and Dielectric Constant
Resistivity
Electric Field of Two Equal and Opposite Charges
A separation of the positive and negative charges can lead to a weak, remnant effect of the positive and negative charges. The expectation is that the more the distance between the positive and...
Electric Field of Parallel Conducting Plates
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric field, the...
