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Impact of disorder on the 5/2 fractional quantum Hall state
W Pan1, N Masuhara, N S Sullivan
1Sandia National Labs, Albuquerque, New Mexico 87185, USA.
Abstract:
We compare the energy gap of the ν = 5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation-doped quantum-well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long-range and short-range disorders play in the 5/2 state and observe that the long-range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.
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