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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Reduction of lattice thermal conductivity in single Bi-Te core/shell nanowires with rough interface

Joohoon Kang1, Jong Wook Roh, Wooyoung Shim

  • 1Department of Materials Science and Engineering, Yonsei University, Seodaemun-gu, Seoul, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|June 15, 2011
PubMed
Abstract

No abstract available in PubMed .

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