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Related Concept Videos

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Debye–Huckel–Onsager Conductance Equation01:28

Debye–Huckel–Onsager Conductance Equation

The Debye-Hückel-Onsager equation is a cornerstone of physical chemistry, providing a method to determine the molar conductance (Λm) and molar conductance at infinite dilution (Λ°m) for uni-univalent electrolytes.Uni-univalent electrolytes are electrolytes that dissociate in solution to produce one cation with a +1 charge and one anion with a –1 charge per formula unit.This equation addresses two crucial phenomena: the asymmetry effect and the electrophoretic effect. According to this equation,...
Reaction Mechanisms: The Steady-State Approximation01:26

Reaction Mechanisms: The Steady-State Approximation

The steady-state approximation, also referred to as the quasi-steady-state approximation to differentiate it from a true steady state, is a widely used method for simplifying calculations in complex reaction mechanisms. This approach is particularly useful when dealing with multi-step reactions that involve reverse reactions or several steps, which can significantly increase mathematical complexity and make the reactions nearly unsolvable analytically.The steady-state approximation operates on...
The Quantum-Mechanical Model of an Atom02:45

The Quantum-Mechanical Model of an Atom

Shortly after de Broglie published his ideas that the electron in a hydrogen atom could be better thought of as being a circular standing wave instead of a particle moving in quantized circular orbits, Erwin Schrödinger extended de Broglie’s work by deriving what is now known as the Schrödinger equation. When Schrödinger applied his equation to hydrogen-like atoms, he was able to reproduce Bohr’s expression for the energy and, thus, the Rydberg formula governing hydrogen spectra. Schrödinger...
Equilibrium Conditions for a Particle01:23

Equilibrium Conditions for a Particle

When an object is in equilibrium, it is either at rest or moving with a constant velocity. There are two types of equilibrium: static and dynamic. Static equilibrium occurs when an object is at rest, while dynamic equilibrium occurs when an object is moving with a constant velocity. In both cases, there must be a balance of forces acting on the object.
To understand the concept of equilibrium, let us first consider the forces acting on an object. When different forces act on an object, they can...
First Law: Particles in One-dimensional Equilibrium01:10

First Law: Particles in One-dimensional Equilibrium

Newton's first law of motion states that a body at rest remains at rest, or if in motion, remains in motion at constant velocity, unless acted on by a net external force. It also states that there must be a cause for any change in velocity (a change in either magnitude or direction) to occur. This cause is a net external force. For example, consider what happens to an object sliding along a rough horizontal surface. The object quickly grinds to a halt, due to the net force of friction. If we...

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Related Experiment Video

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Published on: August 2, 2019

Nonequilibrium transport in quantum impurity models: exact path integral simulations.

Dvira Segal1, Andrew J Millis, David R Reichman

  • 1Chemical Physics Theory Group, Department of Chemistry, University of Toronto, Toronto, Ontario M5S 3H6, Canada.

Physical Chemistry Chemical Physics : PCCP
|June 16, 2011
PubMed
Summary

We simulated quantum impurity models using a novel iterative method to study electronic transport dynamics. This approach offers insights into molecular junctions and provides a comparison to mean-field theories.

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Area of Science:

  • Condensed Matter Physics
  • Quantum Transport Phenomena
  • Many-Body Quantum Systems

Background:

  • Understanding the nonequilibrium dynamics of quantum impurity models is crucial for advancing quantum transport in molecular electronic junctions.
  • Existing methods often face limitations in accurately simulating complex many-body quantum systems.
  • The iterative influence-functional path integral method offers a promising new avenue for such simulations.

Purpose of the Study:

  • To simulate the nonequilibrium dynamics of two generic many-body quantum impurity models.
  • To apply the iterative influence-functional path integral method to quantum transport in molecular electronic junctions.
  • To investigate the time evolution of dot occupation and current characteristics at finite temperatures.

Main Methods:

  • Utilizing the iterative influence-functional path integral method, a recently developed computational technique.
  • Applying the method to specific models: the single impurity Anderson model and the spinless two-state Anderson dot.
  • Analyzing the time evolution of key transport properties, including dot occupation and current.

Main Results:

  • The study successfully simulates the time evolution of dot occupation and current characteristics for the chosen quantum impurity models.
  • The iterative influence-functional path integral method demonstrates its applicability and effectiveness in the context of quantum transport.
  • Comparisons with mean-field results are provided where applicable, highlighting the strengths of the employed method.

Conclusions:

  • The iterative influence-functional path integral method is a powerful tool for simulating nonequilibrium dynamics in quantum impurity models.
  • This approach provides valuable insights into quantum transport phenomena within molecular electronic junctions.
  • The findings contribute to a deeper understanding of electron behavior in nanoscale electronic devices.