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Related Experiment Video

Updated: May 31, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots.

M Mexis1, S Sergent, T Guillet

  • 1Laboratoire Charles Coulomb, UMR5221, CNRS/UM2, Université Montpellier 2, F-34095, Montpellier, France.

Optics Letters
|June 21, 2011
PubMed
Summary

Gallium nitride (GaN) quantum dots (QDs) in microdisk cavities show improved quality factors when grown on aluminum nitride (AlN) barriers compared to AlGaN barriers, indicating lower optical losses.

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Last Updated: May 31, 2026

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Quantum Dots

Background:

  • Microdisk cavities are essential for photon confinement and light-matter interactions.
  • Gallium nitride (GaN) quantum dots (QDs) are promising for optoelectronic applications.
  • The choice of barrier material significantly impacts optical properties.

Purpose of the Study:

  • To compare the quality factor (Q factor) of whispering gallery modes in microdisks incorporating GaN QDs grown on AlN versus AlGaN barriers.
  • To investigate the influence of barrier material on optical losses in GaN QD-based microcavities.
  • To correlate photoluminescence spectroscopy results with material properties.

Main Methods:

  • Fabrication of microdisk (μ-disk) resonators with embedded GaN quantum dots (QDs).
  • Room temperature photoluminescence (PL) spectroscopy to measure whispering gallery modes.
  • Analysis of resonant mode spectra to determine quality factor values.
  • Comparison of experimental results with theoretical simulations.

Main Results:

  • High Q factor resonant modes were observed across the spectrum for both types of microdisks.
  • GaN/AlN QD-based μ-disks exhibited significantly higher Q factors (Q>7000) compared to GaN/AlGaN QD-based μ-disks (Q up to 2000).
  • The improved Q factor in AlN barrier samples is attributed to lower sub-bandgap absorption.

Conclusions:

  • AlN barrier layers offer superior optical performance for GaN QD microdisk resonators compared to AlGaN barriers.
  • The choice of barrier material is critical for minimizing cavity losses and enhancing light-matter interaction.
  • These findings are crucial for developing high-performance optoelectronic devices based on GaN QDs.