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On the hot and cold autosolitons in dissipative semiconductor structures
I K Kamilov1, A A Stepurenko, A S Kovalev
1Institute of Physics of Daghestan Science Center, Russian Academy Science, M Yaragskogo street, 94, Makhachkala, 367003, Russia.
Abstract:
It is experimentally shown that in bulk InSb and Te single crystals, during the formation and excitation of the dissipative structure in the non-equilibrium electron-hole plasma, in the case of a presence of longitudinal autosolitons, the carrier concentration decreases outside the autosolitons, while it increases in the case of transverse autosolitons. The longitudinal autosolitons, forming in the non-equilibrium electron-hole plasma by Joule heating, are considered to be cold, and the transverse autosolitons to be hot.
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