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On the hot and cold autosolitons in dissipative semiconductor structures
I K Kamilov1, A A Stepurenko, A S Kovalev
1Institute of Physics of Daghestan Science Center, Russian Academy Science, M Yaragskogo street, 94, Makhachkala, 367003, Russia.
Summary
In indium antimonide (InSb) and tellurium (Te) crystals, autosolitons affect electron-hole plasma. Longitudinal autosolitons decrease carrier concentration, while transverse autosolitons increase it.
Area of Science:
- Solid-state physics
- Plasma physics
- Materials science
Background:
- Non-equilibrium electron-hole plasma dynamics are crucial in semiconductors.
- Dissipative structures and autosolitons play a significant role in plasma behavior.
- Understanding carrier concentration changes is key to semiconductor device performance.
Purpose of the Study:
- To experimentally investigate the impact of longitudinal and transverse autosolitons on carrier concentration in InSb and Te.
- To differentiate the thermal properties of longitudinal and transverse autosolitons.
- To elucidate the formation mechanisms of autosolitons in these materials.
Main Methods:
- Experimental formation and excitation of dissipative structures in bulk InSb and Te single crystals.
- Analysis of carrier concentration changes in the presence of autosolitons.
- Characterization of autosoliton properties based on their effect on plasma and temperature.
Main Results:
- Longitudinal autosolitons lead to a decrease in carrier concentration outside the autosoliton region.
- Transverse autosolitons result in an increase in carrier concentration outside the autosoliton region.
- Longitudinal autosolitons are identified as 'cold' and transverse autosolitons as 'hot' due to Joule heating.
Conclusions:
- Autosoliton type (longitudinal vs. transverse) dictates carrier concentration redistribution in non-equilibrium InSb and Te plasma.
- Joule heating is a key factor in distinguishing between cold (longitudinal) and hot (transverse) autosolitons.
- The findings offer insights into controlling carrier dynamics in semiconductor materials via autosoliton engineering.
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