Ferromagnetism
Electrostatic Boundary Conditions in Dielectrics
Fermi Level Dynamics
Faraday Disk Dynamo
Static Equilibrium - I
Static Equilibrium - II
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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
1Earth Sciences Department, University of Cambridge, Cambridge, UK.
This review covers the physics of submicron ferroelectrics, focusing on their use in memory devices like ferroelectric nonvolatile random access memories (FRAMs) and dynamic random access memories (DRAMs). It also explores fundamental physics challenges related to device size.
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