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Interfacial electronic traps at ZnSe/GaAs heterostructures studied by photomodulation Raman scattering
T A El-Brolossy1, S Abdalla, S Negm
1Physics Department, Faculty of Science, Ain Shams University, Cairo, Egypt.
Abstract:
Photomodulation Raman scattering spectroscopy has been employed to study free charge trapping mechanisms at ZnSe-GaAs(001) heterostructure interfaces. This technique reveals that the interfacial region contains predominantly hole traps. Time dependent measurements of the photomodulated Raman scattering intensity show that interfacial charge-trap lifetime is ≈30 s for both electrons and holes.
