Fundamental state quantities and high-pressure phase transition in beryllium chalcogenides

A Berghout1, A Zaoui, J Hugel

  • 1LPMD Institut de Physique Electronique et de Chimie, 1 Boulevard Dominique-François Arago CP 87811, 57078 Metz Cedex 3, France. LML Ecole Polytechnique de Lille, Université des Sciences et Technologie de Lille, Cité Scientifique, Avenue Paul Langevin, 59655 Villeneuve d'Ascq Cedex, France.

Summary

This study investigates beryllium chalcogenides (BeS, BeSe, BeTe), revealing their structural and electronic properties. Findings confirm a wide indirect band gap and significant ionic bonding in these materials.

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