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Updated: May 31, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Precipitation phenomena in and electrical resistivity of high-temperature treated langatate (La3Ta0.5Ga5.5O14)
Ritsuko Yaokawa1, Hiromitsu Kimura, Katsumi Aota
1Citizen Holdings Co., Ltd., Tokorozawa, Saitama, Japan.
Abstract:
La(3)Ta(0.5)Ga(5.5)O(14) (LTG) single crystals, which have no phase transition up to the melting point, were heat-treated in air at temperatures from 1000°C to 1450°C for 10 h. LaTaO(4) (LT) and LaGaO(3) (LG), which coexist with LTG in the three-phase region on the Ga-poor side, precipitated on the surface of the crystal for heat treatments above 1300°C because of Ga evaporation during the heat treatment. The Ga-poor state near the surface of the 1450°C heat-treated specimen was confirmed by electron probe micro-analysis measurements. The electrical resistivity of LTG single crystals decreased by heat treatment in the range of 1000°C to 1200°C for 10 h in air, where no precipitation was observed, whereas the resistivity increased with heat treatment over 1400°C for 10 h in air. The electrical resistivity of the Ga-poor surface region was higher than that of the interior.

