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Updated: May 31, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission
E Starikov1, P Shiktorov, V Gružinskis
1Semiconductor Physics Institute, A Goštauto 11, 01108 Vilnius, Lithuania.
Abstract:
The conditions for THz radiation generation caused by electron transit-time resonance in momentum and real spaces under optical phonon emission are analyzed for nitride-based materials and their structures. It is shown that such a mechanism provides a unique possibility to realize sub-THz and THz radiation generation at the border between the electro-optical and electronic techniques by using two alternative approaches: (i) amplification of transverse electromagnetic waves in 3D bulk materials and 2D quantum wells, and (ii) longitudinal current-field instabilities in sub-micron and micron n(+)nn(+) diodes. Estimations of frequency regions, output power and efficiency of the generation demonstrate that nitrides are promising materials for THz radiation generation.
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