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Related Experiment Video

Updated: May 31, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Quantum dots for terahertz generation.

H C Liu1, B Aslan, J A Gupta

  • 1Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|June 23, 2011
PubMed
Summary
This summary is machine-generated.

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Novel semiconductor quantum dot (QD) structures show promise for terahertz (THz) generation. Researchers explored resonant tunneling through QDs and impurities for efficient THz emission applications.

Area of Science:

  • Semiconductor Nanostructures
  • Terahertz (THz) Photonics
  • Quantum Dot Devices

Background:

  • Quantum wells and quantum dots (QDs) are established semiconductor nanostructures with existing device applications.
  • Terahertz (THz) generation is an area of significant research interest for various applications.
  • QDs offer potential advantages for THz light emission, including low threshold current density and high characteristic temperature.

Purpose of the Study:

  • To investigate novel quantum dot (QD) structures and related devices for terahertz (THz) generation.
  • To explore the potential of resonant tunneling through QDs for THz emission.
  • To examine the feasibility of using shallow impurities for THz emission via tunneling.

Main Methods:

  • Fabrication and characterization of devices featuring self-assembled InAs QDs in a GaAs matrix.

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Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
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Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

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Related Experiment Videos

Last Updated: May 31, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
10:54

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

  • Integration of a GaInNAs/GaAs short period superlattice within the QD device design.
  • Development and testing of AlGaAs/GaAs double-barrier resonant tunneling structures incorporating shallow impurities.

    • Main Results:

    • Initial results demonstrate the feasibility of using resonant tunneling through QDs for THz generation.
    • Exploration of shallow impurities within quantum wells shows potential for THz emission.
    • The study presents novel device designs for enhanced THz emission characteristics.

    Conclusions:

    • Quantum dots (QDs) are promising candidates for developing efficient terahertz (THz) light-emitting devices.
    • Resonant tunneling through QDs and shallow impurities offers viable pathways for THz generation.
    • Further research into these nanostructures could lead to practical THz sources.