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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Atomistic modeling of III-V nitrides: modified embedded-atom method interatomic potentials for GaN, InN and
Eun Cheol Do1, Young-Han Shin, Byeong-Joo Lee
1Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea.
Abstract:
Modified embedded-atom method (MEAM) interatomic potentials for the Ga-N and In-N binary and Ga-In-N ternary systems have been developed based on the previously developed potentials for Ga, In and N. The potentials can describe various physical properties (structural, elastic and defect properties) of both zinc-blende and wurtzite-type GaN and InN as well as those of constituent elements, in good agreement with experimental data or high-level calculations. The potential can also describe the structural behavior of Ga(1-x)In(x)N ternary nitrides reasonably well. The applicability of the potentials to atomistic investigations of atomic/nanoscale structural evolution in Ga(1-x)In(x)N multi-component nitrides during the deposition of constituent element atoms is discussed.
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