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Updated: May 31, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
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Doping dependent nonlinear Hall effect in SmFeAsO(1-x)F(x).

Scott C Riggs1, R D McDonald, J B Kemper

  • 1National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|June 23, 2011
PubMed
Summary

Investigating SmFeAsO(1-x)F(x) superconductors reveals distinct Hall resistivity behaviors. Lightly doped samples show nonlinear, temperature-dependent resistivity linked to structural and magnetic transitions, indicating an energy gap.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Superconductivity

Background:

  • The interplay between superconductivity, structural phase transitions (SPT), and magnetic ordering (MO) in iron-based superconductors is complex.
  • Understanding charge carrier behavior in SmFeAsO(1-x)F(x) is crucial for elucidating its superconducting mechanisms.

Purpose of the Study:

  • To investigate the Hall resistivity, ρ(xy), of polycrystalline SmFeAsO(1-x)F(x) across various fluorine concentrations (x).
  • To correlate Hall resistivity behavior with superconductivity, structural phase transitions, and magnetic ordering.
  • To determine the evolution of the energy gap with doping.

Main Methods:

  • Measurement of Hall resistivity, ρ(xy), as a function of magnetic field (H) and temperature (T).
  • Systematic variation of fluorine doping concentration (x) in SmFeAsO(1-x)F(x).
  • Analysis of resistivity data in relation to superconductivity onset and structural/magnetic transitions.

Main Results:

  • Highly doped samples (x≥0.15) exhibit linear Hall resistivity, characteristic of a Fermi liquid, up to 50 T with weak temperature dependence.
  • Lightly doped samples (x<0.15) display nonlinear and strongly temperature-dependent Hall resistivity at low temperatures, even with a small Hall angle.
  • The nonlinear regime's onset correlates with structural and magnetic phase transitions, suggesting an energy gap responsible for thermal activation of carriers.

Conclusions:

  • Hall resistivity measurements reveal distinct electronic behaviors in SmFeAsO(1-x)F(x) dependent on fluorine doping.
  • A novel low-temperature electronic state emerges in lightly doped samples, linked to structural and magnetic ordering.
  • The presence and evolution of an energy gap, evidenced by thermal activation, are key features in the lightly doped regime.