Quantum confinement and magnetic-field effects on the electron g factor in GaAs-(Ga, Al)As cylindrical quantum dots

We have performed a theoretical study of the quantum confinement (geometrical and barrier potential confinements) and axis-parallel applied magnetic-field effects on the conduction-electron effective Landé g factor in GaAs-(Ga, Al)As cylindrical quantum dots. Numerical calculations of the g factor are performed by using the Ogg-McCombe effective Hamiltonian-which includes non-parabolicity and anisotropy effects-for the conduction-band electrons. The quantum dot is assumed to consist of a finite-length cylinder of GaAs surrounded by a Ga(1-x)Al(x)As barrier. Theoretical results are given as functions of the Al concentration in the Ga(1-x)Al(x)As barrier, radius, lengths and applied magnetic fields. We have studied the competition between the quantum confinement and applied magnetic field, finding that in this type of heterostructure the geometrical confinement and Al concentration determine the behavior of the electron effective Landé [Formula: see text] factor, as compared to the effect of the applied magnetic field. Present theoretical results are in good agreement with experimental reports in the limiting geometry of a quantum well, and with previous theoretical findings in the limiting case of a quantum well wire.