Related Experiment Video
Updated: May 31, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Effects of external stress on defect complexes in semiconductors
1Department of Physics, Addis Ababa University, PO Box 1176, Addis Ababa, Ethiopia. Helmholtz-Institut für Strahlen und Kernphysik, Nussalle 14-16, 53115 Bonn, Germany.
Abstract:
Crystal field gradients that exist at lattice sites in solids depend on the symmetry of charge distribution around atomic sites. The charge symmetry could be broken either by the presence of impurity complexes in the host matrix or by external stress on the samples, which leads to an observable magnitude of electric field gradients (EFGs). The perturbed γ-γ angular correlation (PAC) method is employed here to investigate the effect of uniaxial stress on (111)Cd sites in crystalline doped semiconductors.
More Related Videos
09:26In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
Published on: June 26, 2015
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Imperfections in Crystal Structure: Stoichiometric Point Defects
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Types of Semiconductors