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Published on: July 17, 2020
Local structure of liquid Ge(1)Sb(2)Te(4) for rewritable data storage use
Zhimei Sun1, Jian Zhou, Andreas Blomqvist
1Department of Materials Science and Engineering, College of Materials, Xiamen University, 361005, People's Republic of China.
Understanding the liquid structure of germanium-antimony-tellurium (GeSbTe) alloys is key to unlocking fast, reversible phase transitions for nonvolatile memory. This study reveals unique atomic coordination in liquid Ge(1)Sb(2)Te(4), explaining its data storage potential.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Chalcogenide alloys, particularly germanium-antimony-telluride (GeSbTe) systems, are foundational for optical data storage and emerging nonvolatile electrical memory.
- The precise atomic-level mechanisms governing the rapid, reversible phase transitions in these materials remain incompletely understood.
Purpose of the Study:
- To investigate the local atomic structure of liquid germanium-antimony-tellurium (Ge(1)Sb(2)Te(4)) using ab initio molecular dynamics.
- To elucidate the relationship between the liquid-state structure and the fast, reversible phase transition crucial for rewritable data storage applications.
Main Methods:
- Ab initio molecular dynamics simulations were employed to model the liquid phase of Ge(1)Sb(2)Te(4).
- Analysis involved calculating partial pair correlation functions and bond angle distributions to characterize atomic coordination.
Main Results:
- Liquid Ge(1)Sb(2)Te(4) exhibits distinct local atomic structures: antimony (Sb) atoms are predominantly octahedrally coordinated.
- Germanium (Ge) atoms show a mix of tetrahedral and fivefold coordination, while tellurium (Te) atoms are mainly fourfold and threefold coordinated.
- The overall liquid structure shares similarities with the crystalline form but features significantly lower coordination numbers.
Conclusions:
- The unique, less densely packed liquid structure of Ge(1)Sb(2)Te(4) is proposed as the underlying reason for its rapid and reversible switching between crystalline and amorphous states.
- This finding provides critical insights into the mechanism of phase-change memory operation.
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