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Updated: May 31, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Atomic structure of misfit dislocations at InAs/GaAs(110)

R Choudhury1, D R Bowler, M J Gillan

  • 1Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, UK.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|June 23, 2011
PubMed

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