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Updated: May 31, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
A parametric study of laser induced ablation-oxidation on porous silicon surfaces
Luca De Stefano1, Ilaria Rea, M Arcangela Nigro
1National Council of Research-Institute for Microelectronic and Microsystems-Department of Naples, Via P Castellino 111, 80131 Naples, Italy.
Abstract:
We have investigated the laser induced ablation-oxidation process on porous silicon layers having different porosities and thicknesses by non-destructive optical techniques. In particular, the interaction between a low power blue light laser and the porous silicon surfaces has been characterized by variable angle spectroscopic ellipsometry and Fourier transform infrared spectroscopy. The oxidation profiles etched on the porous samples can be tuned as functions of the layer porosity and laser fluence. Oxide stripes of width less than 2 µm and with thicknesses between 100 nm and 5 µm have been produced, depending on the porosity of the porous silicon, by using a 40 × focusing objective.

