A numerical study of transport and shot noise in 2D hopping

We have used modern supercomputer facilities to carry out extensive Monte Carlo simulations of 2D hopping (at negligible Coulomb interaction) in conductors with a completely random distribution of localized sites in both space and energy, within a broad range of the applied electric field E and temperature T, both within and beyond the variable-range hopping region. The calculated properties include not only dc current and statistics of localized site occupation and hop lengths, but also the current fluctuation spectrum. Within the calculation accuracy, the model does not exhibit 1/f noise, so that the low-frequency noise at low temperatures may be characterized by the Fano factor F. For sufficiently large samples, F scales with conductor length L as (L(c)/L)(α), where α = 0.76 ± 0.08<1, and parameter L(c) is interpreted as the average percolation cluster length. At relatively low E, the electric field dependence of parameter L(c) is compatible with the law [Formula: see text] which follows from directed percolation theory arguments.