P-N junction
Characteristics of JFET
Metal-Semiconductor Junctions
Characteristics of MOSFET
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: May 31, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
A J Weymouth1, T Wutscher, J Welker
1Institute of Experimental and Applied Physics, University of Regensburg, Regensburg, Germany.
Tunneling current affects atomic force measurements on low-conductivity samples. This current lowers the effective gap voltage, causing an apparent repulsive force, impacting surface science studies.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: