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Updated: May 31, 2026
Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Optimized transport properties of LaAlO₃/SrTiO₃ heterointerfaces by variation of pulsed laser fluence
F Schoofs1, T Fix, A S Kalabukhov
1Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
Abstract:
We show the influence of pulsed laser deposition fluence on the transport properties of the LaAlO(3)/SrTiO(3) (LAO/STO) heterointerface. Structural characterization by x-ray diffraction and medium energy ion spectrometry enables us to deduce that the electronic behaviour is extremely sensitive to the stoichiometry of the LAO layer as well as the structural quality of the STO surface. An optimum balance of these two quantities is demonstrated for an intermediate laser fluence.
