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Updated: May 31, 2026

The Effect of Interfacial Chemical Bonding in TiO2-SiO2 Composites on Their Photocatalytic NOx Abatement Performance

The Effect of Interfacial Chemical Bonding in TiO₂-SiO₂ Composites on Their Photocatalytic NOx Abatement Performance

Published on: July 4, 2017

Enhanced silicon oxidation on titanium-covered Si(001).

S Ohno¹, K Shudo, F Nakayama

¹Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan. sohno@ynu.ac.jp

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|June 29, 2011

Summary

This summary is machine-generated.

We studied ultrathin silicon oxide (SiO(x)) formation on titanium-covered silicon. Oxygen exposure created a silicon dioxide layer beneath the titanium oxide, indicating a new interface material. This research is key for understanding thin film growth on silicon surfaces.

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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Growth and Electrostatic/chemical Properties of Metal/LaAlO₃/SrTiO₃ Heterostructures

Published on: February 8, 2018

Area of Science:

Materials Science
Surface Science
Solid State Physics

Background:

Understanding the initial oxidation of silicon surfaces is crucial for semiconductor device fabrication.
Titanium silicide formation is relevant for microelectronics applications.

Purpose of the Study:

To investigate the formation of ultrathin silicon oxide (SiO(x)) at the interface of a titanium-covered Si(001) surface.
To characterize the chemical states and thickness of the oxide layer formed.

Main Methods:

Core level photoemission spectroscopy was employed to study the electronic structure.
Analysis of Si 2p core level shifts provided insights into chemical bonding and oxidation states.

Main Results:

Oxygen exposure at room temperature formed a SiO(2-δ) layer, near SiO(2) stoichiometry, beneath the titanium oxide film.
The ultrathin SiO(2-δ) layer thickness was estimated at approximately 0.9 nm (3-4 oxide layers).
Annealing induced further chemical shifts attributed to the formation of titanium silicate (TiSi(x)O(y)).

Conclusions:

The study reveals the formation of a distinct silicon oxide layer at the Ti/Si interface during oxidation.
The findings highlight the complex interfacial chemistry involving titanium, silicon, and oxygen.
The results contribute to the understanding of interfacial reactions in metal-semiconductor systems.