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Doping graphene films via chemically mediated charge transfer.

Ryousuke Ishikawa¹, Masashi Bando, Yoshitaka Morimoto

¹Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan. ishikawa.r.ab@m.titech.ac.jp.

Nanoscale Research Letters

|June 30, 2011

Summary

Researchers developed a new method to improve graphene conductivity for transparent conductive films (TCFs). Using tetracyanoquinodimethane (TCNQ) for p-type doping enhances TCF performance without sacrificing transparency.

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Area of Science:

Materials Science
Condensed Matter Physics
Organic Electronics

Background:

Transparent conductive films (TCFs) are essential for electronic devices like displays and solar cells.
Graphene offers high conductivity and transparency, making it a promising material for TCFs.
Controlling carrier type and concentration in graphene doping is crucial for industrial applications, particularly for p-type films.

Purpose of the Study:

To introduce a novel method for doping graphene films.
To achieve p-type doping in graphene using a conjugated organic molecule.
To enhance the properties of graphene-based TCFs for practical use.

Main Methods:

Utilized tetracyanoquinodimethane (TCNQ), a strong electron acceptor, for graphene doping.

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Employed a charge transfer mechanism to induce p-type doping in graphene.

Investigated the effect of TCNQ doping on the electrical resistivity and optical transparency of graphene films.

Main Results:

Tetracyanoquinodimethane (TCNQ) effectively facilitated p-type doping of graphene.
Small amounts of TCNQ significantly reduced the electrical resistivity of graphene films.
Optical transparency of the graphene films remained undegraded after TCNQ doping.

Conclusions:

The developed charge transfer doping method using TCNQ is a viable strategy for enhancing graphene-based TCFs.
This approach offers a promising pathway for the industrial application of graphene in transparent electronics.
The method addresses the challenge of controlled p-type doping in graphene films.