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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

Faten Adel Ismail Chaqmaqchee¹, Simone Mazzucato, Murat Oduncuoglu

¹School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK. faicha@essex.ac.uk.

Nanoscale Research Letters

|June 30, 2011

Summary

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This study explores Hot Electron Light Emission and Lasing (Hellish) devices as vertical cavity semiconductor optical amplifiers (VCSOAs). GaInNAs/GaAs Hellish VCSOAs show promise for 1.3-μm operation with improved gain and bandwidth.

Area of Science:

Semiconductor heterostructures
Optoelectronics
Quantum well devices

Background:

Hot Electron Light Emission and Lasing (Hellish) devices are surface emitters utilizing longitudinal carrier injection.
These devices can function as vertical cavity surface emitting lasers or vertical cavity semiconductor optical amplifiers (VCSOAs).
GaInNAs/GaAs material systems are suitable for 1.3-μm wavelength applications.

Purpose of the Study:

Investigate the potential of Hellish VCSOAs using GaInNAs/GaAs for 1.3-μm operation.
Explore improvements in gain and bandwidth through undoped distributed Bragg reflectors and direct active region injection.
Assess the feasibility of Hellish VCSOA design and performance.

Main Methods:

Device design based on the transfer matrix method and optical field distribution analysis.

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Crucial determination of quantum well positioning within the heterostructure.

Experimental characterization using I-V, L-V, photoluminescence, electroluminescence, and electro-photoluminescence across varying temperatures and biases.

Theoretical calculation of cavity resonance and gain peak curves.

Main Results:

A Hellish VCSOA device with eleven GaInNAs/GaAs quantum wells was fabricated and assessed.
Experimental characterization provided data on device performance under different conditions.
Calculated cavity resonance and gain peak curves showed good agreement with experimental findings.
The GaInNAs/GaAs material system demonstrated suitability for 1.3-μm operation in VCSOA devices.

Conclusions:

Hellish VCSOAs based on GaInNAs/GaAs are a viable technology for 1.3-μm optical amplification.
The device design and characterization confirm the potential for enhanced gain and bandwidth.
The study validates the theoretical models used for device design and performance prediction.