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Related Concept Videos

Atomic Nuclei: Nuclear Spin State Overview01:03

Atomic Nuclei: Nuclear Spin State Overview

NMR-active nuclei have energy levels called 'spin states' that are associated with the orientations of their nuclear magnetic moments. In the absence of a magnetic field, the nuclear magnetic moments are randomly oriented, and the spin states are degenerate. When an external magnetic field is applied, the spin states have only 2 + 1 orientations available to them. A proton with = ½ has two available orientations. Similarly, for a quadrupolar nucleus with a nuclear spin value of one, the...
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Spin systems where the difference in chemical shifts of the coupled nuclei is greater than ten times J are called first-order spin systems. These nuclei are weakly coupled, and their chemical shifts and coupling constant can generally be estimated from the well-separated signals in the spectrum.
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Related Experiment Video

Updated: May 31, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

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Published on: November 1, 2013

Spin effects in InAs self-assembled quantum dots.

Ednilson C Dos Santos1, Yara Galvão Gobato, Maria Jsp Brasil

  • 1Physics Department, Federal University of São Carlos, São Carlos, Brazil. yara@df.ufscar.br.

Nanoscale Research Letters
|June 30, 2011
PubMed
Summary
This summary is machine-generated.

We investigated polarized photoluminescence in a resonant tunneling diode (RTD) with InAs quantum dots (QDs). QD polarization degree is sensitive to voltage and light intensity, influenced by carrier tunneling and capture dynamics.

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Area of Science:

  • Semiconductor physics
  • Quantum dot optoelectronics
  • Spintronics

Background:

  • Resonant tunneling diodes (RTDs) are key for high-frequency electronics.
  • Quantum dots (QDs) offer unique quantum confinement effects for optoelectronic applications.
  • Polarized photoluminescence is a powerful tool for probing carrier dynamics and spin properties.

Purpose of the Study:

  • To investigate the voltage and light intensity dependence of polarized photoluminescence in an n-type GaAs/AlGaAs RTD with embedded InAs QDs.
  • To understand the role of carrier tunneling, capture, and hole density in determining QD polarization.
  • To explore the potential of QD-based RTDs for spintronic applications.

Main Methods:

  • Fabrication of n-type GaAs/AlGaAs resonant tunneling diodes (RTDs) incorporating InAs self-assembled quantum dots (QDs).
  • Measurement of polarized resolved photoluminescence spectra as a function of applied voltage and excitation light intensity.
  • Analysis of polarization degree based on carrier transport and recombination models.

Main Results:

  • Observed a strong dependence of the quantum dot circular polarization degree on applied voltage.
  • Demonstrated that light intensity also influences the polarization degree of the quantum dots.
  • Correlated polarization changes with minority carrier tunneling into the quantum well and carrier capture by InAs QDs.

Conclusions:

  • The observed polarization phenomena are attributed to the interplay of minority carrier tunneling, QD capture efficiency, and bias-controlled hole density in the quantum well.
  • These findings highlight the tunability of spin polarization in QD-based RTDs.
  • Suggests potential for voltage-controlled spin manipulation in future spintronic devices.