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Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

New Si-based multilayers for solar cell applications

R Pratibha Nalini1, Christian Dufour, Julien Cardin

  • 1CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd, Maréchal Juin, 14050 Caen Cedex 4, France. fabrice.gourbilleau@ensicaen.fr.

Nanoscale Research Letters
|June 30, 2011
PubMed

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P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...