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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Developing High Performance GaP/Si Heterojunction Solar Cells
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Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

New Si-based multilayers for solar cell applications.

R Pratibha Nalini1, Christian Dufour, Julien Cardin

  • 1CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd, MarĂ©chal Juin, 14050 Caen Cedex 4, France. fabrice.gourbilleau@ensicaen.fr.

Nanoscale Research Letters
|June 30, 2011
PubMed
Summary
This summary is machine-generated.

Silicon nitride (SiNx) multilayer structures demonstrate enhanced visible luminescence compared to silicon dioxide (SiO2) after annealing. SiNx offers improved optical properties and thermal control, making it a promising alternative host matrix for optical applications.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Multilayer structures are crucial in optical devices.
  • Silicon dioxide (SiO2) is a common host matrix, but its limitations are being explored.
  • Alternative host matrices are needed to enhance optical properties.

Purpose of the Study:

  • To fabricate and investigate a novel multilayer structure using silicon nitride (SiNx) as a host matrix.
  • To compare the optical properties of SiNx-based multilayers with traditional SiO2-based ones.
  • To evaluate the impact of annealing on the luminescence of these structures.

Main Methods:

  • Fabrication of Si-SiO2/SiNx multilayer structures via reactive magnetron sputtering.
  • Structural characterization using Fourier transform infrared spectroscopy (FTIR).
  • Analysis of optical properties, including visible luminescence, before and after annealing treatments.

Main Results:

  • The SiNx host matrix exhibits superior visible luminescence compared to SiO2.
  • Annealing treatments allow for controlled enhancement of luminescence in SiNx structures.
  • SiNx-based multilayers demonstrate improved optical performance and thermal stability.

Conclusions:

  • Silicon nitride (SiNx) is a viable and potentially superior alternative to silicon dioxide (SiO2) as a host matrix in multilayer optical structures.
  • The developed SiNx multilayer structures show significant promise for applications requiring enhanced visible luminescence.
  • Controlled annealing is key to optimizing the optical performance of SiNx-based materials.