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Updated: May 31, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
Caihong Jia1, Yonghai Chen, Yan Guo
1Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China. yhchen@semi.ac.cn.
Abstract:
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
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