Related Experiment Video
Updated: May 31, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Tunneling of Dirac electrons through one-dimensional potentials in graphene: a T-matrix approach
1Theoretical Department, Institute of Physics, VAST, PO Box 429 Bo Ho, Hanoi 10000, Vietnam.
Abstract:
The standard T-matrix method can be effectively used for studying the dynamics of Dirac electrons under one-dimensional potentials in graphene. The transmission probability expressed in terms of T-matrices and the corresponding ballistic current are derived for any smooth one-dimensional potential, taking into account the chirality of Dirac massless carriers. Numerical calculations are illustrated for the potential approximately describing graphene n-p junctions.
Related Concept Videos
Debye–Huckel–Onsager Conductance Equation
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
The de Broglie Wavelength
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Force and Potential Energy in One Dimension
The Quantum-Mechanical Model of an Atom

