MOS Capacitor
Phase Contrast and Differential Interference Contrast Microscopy
Interfacial Electrochemical Methods: Overview
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High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal
Published on: October 31, 2019
R E Simpson1, P Fons, A V Kolobov
1Nanoelectronics Research Institute, National Institute of Applied Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562, Japan. robert.simpson@aist.go.jp
New interfacial phase-change memory (IPCM) using GeTe/Sb(2)Te(3) superlattices offers reduced switching energy and enhanced endurance for non-volatile data storage. This technology shows promise for next-generation memory applications.
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