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Updated: May 31, 2026
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Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface
Hiroaki Maeda1, Ryota Sakamoto, Yoshihiko Nishimori
1Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-0033, Japan.
Chemical Communications (Cambridge, England)
|July 5, 2011
Abstract:
Linear and branched Fe(tpy)(2) complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.
