Related Experiment Video
Updated: May 31, 2026
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Fabrication and field emission property of a Si nanotip array
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong.
Abstract:
Using a Si-based porous anodic alumina membrane as a mask, we demonstrate a way to pattern Si surface. After removing the SiO(2) nanoislands formed during anodization of the Al/Si interface, we obtain a Si nanotip array on the surface of a Si wafer. This array shows an excellent field emission property with a low turn-on field of 8.5 V µm(-1). The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the quantum tunnelling effect. The Si nanotip array can be expected to have important applications in nanoelectronic devices.
