High-voltage SPM oxidation of ZrN: materials for multiscale applications
1Department of Physics, The University of Akron, Akron, OH 44325-4001, USA. Department of Chemistry, The University of Akron, Akron, OH 44325-4001, USA.
Nanotechnology
|July 6, 2011
Summary
Scanning probe microscope oxidation rapidly creates robust zirconium oxide structures on zirconium nitride films. These nanoscale features show controlled growth, promising for diverse multiscale applications.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Science
Background:
- Zirconium nitride (ZrN) films are crucial in various technological applications.
- Controlled fabrication of nanoscale oxide features is essential for advanced materials.
Purpose of the Study:
- To investigate the feasibility of using scanning probe microscope (SPM) oxidation for creating zirconium oxide (ZrO2) features on ZrN films.
- To characterize the growth kinetics and properties of the fabricated ZrO2 features.
Main Methods:
- Utilized scanning probe microscope (SPM) oxidation in contact mode.
- Applied a 70 V DC voltage between the probe tip and ZrN substrate.
- Performed long-time oxidation experiments and selective etching.
Main Results:
- Achieved rapid and controlled growth of ZrO2 features on ZrN films.
- Features exceeded 200 nm in height after 10 s and 1000 nm after 300 s.
- Observed delamination and new material formation at the ZrN/Si interface upon reaching the silicon substrate.
Conclusions:
- High-voltage SPM oxidation is a fast and sustainable method for growing robust ZrO2 features on ZrN.
- The fabricated oxide structures are suitable for multiscale (nanometer-to-micrometer) applications.
