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Updated: May 31, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
[Formula: see text] ↔ (3 × 3) phase transition in Pb/Ge(111) and Sn/Ge(111): a phenomenological study on the phase
A Cano1, A P Levanyuk, E G Michel
1Departamento de Física de la Materia Condensada C-III, Universidad Autónoma de Madrid, E-28049 Madrid, Spain.
Abstract:
A phenomenological study of the [Formula: see text] phase transitions occurring in the adsorption systems Pb/Ge(111) and Sn/Ge(111) is presented. The starting point of such a study is the Landau theory. The critical behaviour expected theoretically for the two interfaces, and the corresponding influence of defects, are discussed in detail. Symmetry arguments show that, contrary to general belief, the critical behaviours of Pb/Ge(111) and Sn/Ge(111) are essentially different. The Landau-like approach employed to study the influence of defects provides a consistent and general manner to interpret the existing experimental data. Special attention is paid to the influence of hopping defects in Sn/Ge(111).
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