Interface study on heterostructured GaP-GaAs nanowires
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Published on: November 15, 2013
Magnus T Borgström1, Marcel A Verheijen, George Immink
1Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands.
Abstract:
The interface chemical composition of heterostructured GaP-GaAs nanowire segments was studied by the use of energy-dispersive x-ray analysis. An arsenic-rich tail in the GaP segments following GaAs could be minimized by reducing the AsH(3) molar fraction and the growth rate. For the temperature regime used for vapour-liquid-solid growth, we observe the opposite trend on interface sharpness compared to high-temperature layer-by-layer growth, that is, the sharpness of the interface improves with reducing temperature.
