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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Magnetic Field Due To A Thin Straight Wire01:27

Magnetic Field Due To A Thin Straight Wire

Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
Magnetic Field Of A Current Loop01:16

Magnetic Field Of A Current Loop

Consider a circular loop with a radius a, that carries a current I. The magnetic field due to the current at an arbitrary point P along the axis of the loop can be calculated using the Biot-Savart law.
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Torque On A Current Loop In A Magnetic Field01:13

Torque On A Current Loop In A Magnetic Field

The most common application of magnetic force on current-carrying wires is in electric motors. These consist of loops of wire, which are placed between the magnets with a magnetic field. When current flows through the loops, the magnetic field applies torque, which causes the shaft to rotate, thus converting electrical energy to mechanical energy.
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
Magnetic Force Between Two Parallel Currents01:13

Magnetic Force Between Two Parallel Currents

Two long, straight, and parallel current-carrying conductors exert a force of equal magnitude on one another. The direction of the force depends on the current direction in the conductors.
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and  the vector product of the length vector along the current element and the field due to the first conductor. According to the...

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Related Experiment Video

Updated: May 31, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Ab initio simulation of magnetic tunnel junctions.

Derek Waldron1, Lei Liu, Hong Guo

  • 1Centre for the Physics of Materials and Department of Physics, McGill University, Montreal, PQ, H3A 2T8, Canada.

Nanotechnology
|July 7, 2011
PubMed
Summary

We developed an ab initio method to calculate spin-polarized quantum transport in spintronic devices. This approach, using density functional theory and non-equilibrium Green

Area of Science:

  • Physics
  • Materials Science
  • Quantum Mechanics

Background:

  • Spintronic devices offer advanced functionalities beyond traditional electronics.
  • Accurate theoretical modeling is crucial for designing efficient spintronic devices.
  • Understanding spin-polarized transport is key to controlling electron spin in nanoscale systems.

Purpose of the Study:

  • To present a novel ab initio method for calculating quantum transport properties.
  • To detail the mathematical and implementation aspects of the developed method.
  • To investigate spin-polarized transport in a Fe/MgO/Fe trilayer structure.

Main Methods:

  • Density Functional Theory (DFT) for electronic structure calculations.
  • Keldysh non-equilibrium Green's function (NEGF) formalism for transport calculations.

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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

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Last Updated: May 31, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

  • Self-consistent calculation of spin densities under external bias.
  • Main Results:

    • The study provides a robust method for simulating spin-polarized quantum transport.
    • Demonstrated application to a Fe/MgO/Fe trilayer system.
    • Analysis of nonlinear and non-equilibrium transport phenomena.

    Conclusions:

    • The presented ab initio DFT-NEGF method is effective for spintronic device simulations.
    • The findings contribute to the understanding of spin transport in magnetic tunnel junctions.
    • This work facilitates the design and optimization of future spintronic devices.