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Nanoscale domain switching behaviour in polycrystalline ferroelectric thin films
S Wicks1, V Anbusathiah, V Nagarajan
1School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia.
Nanotechnology
|July 7, 2011
Summary
We visualized nanoscale domain switching in lead zirconate titanate (PZT) thin films using piezoresponse force microscopy (PFM). Our findings reveal complex interactions between electrical and mechanical fields influencing domain behavior in polycrystalline ferroelectrics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Ferroelectric thin films, such as lead zirconate titanate (PZT), exhibit complex domain structures crucial for device applications.
- Understanding nanoscale domain switching is essential for optimizing ferroelectric material properties and performance.
- Polycrystalline ferroelectrics present unique challenges due to grain-to-grain interactions.
Purpose of the Study:
- To investigate the nanoscale domain switching behavior in polycrystalline tetragonal PZT ferroelectric thin films.
- To visualize and analyze the interplay between electrical and mechanical fields at the nanoscale.
- To identify mechanisms driving complex domain dynamics in PZT thin films.
Main Methods:
- Utilized piezoresponse force microscopy (PFM) to image local domain structures.
- Varied biasing conditions and tip locations within 50-100 nm grains.
- Analyzed nanoscale piezoresponse images to observe domain switching phenomena.
Main Results:
- Direct visual evidence of correlated switching between neighboring grains was obtained.
- Ferroelastic domain switching and inhomogeneous piezostrain profiles were observed.
- Domain pinning effects on very small length scales were identified, highlighting complex field interactions.
Conclusions:
- Nanoscale domain switching in polycrystalline PZT is governed by intricate electrical and mechanical field interplay.
- Grain-to-grain interactions significantly influence local domain behavior and switching dynamics.
- The study provides detailed insights into mechanisms causing complex domain phenomena in ferroelectric thin films.

