Conduction intersubband transitions at normal incidence in Si(1-x)Ge(x) quantum well devices

We show theoretically that it is possible to design SiGe-based quantum well structures in which conduction intersubband transitions are induced by normal incidence infrared radiation. A sp(3)d(5)s(*) tight binding model has been adopted to evaluate the electronic states and optical transitions between lowest conduction confined states of a superlattice composed of one pure Ge quantum well separated by SiGe alloys, grown along the [001] direction. We find that significant optical coupling between confined states in the Ge wells is achieved at normal incidence radiation by the off-diagonal elements of the mass tensor. The minimum energy Ge conduction valleys are, in fact, tilted with respect to the [001] growth axis. For comparison we show that no such coupling can be realized for the conduction states confined in a similar structure composed by Si quantum wells because the ellipsoids of the lowest conduction valleys are oriented along the growth direction.