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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Thermal Sigmatropic Reactions: Overview

Sigmatropic rearrangements are a class of pericyclic reactions in which a σ bond migrates from one part of a π system to another. These are intramolecular rearrangements where the total number of σ and π bonds remain unchanged.
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in 1,5-hexadiene, referred to as...
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Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Band Theory02:35

Band Theory

When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...

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Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires.

Z C Lin1, W H Hsieh, C P Lee

  • 1Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, Taiwan 30050, Republic of China.

Nanotechnology
|July 7, 2011
PubMed
Summary
This summary is machine-generated.

Electron mobility in InAs quantum wires within InGaAs/InAlAs heterostructures shows strong directional asymmetry. Electrons moving parallel to the wires exhibit higher mobility than those moving perpendicular, due to scattering differences.

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Published on: November 24, 2016

Area of Science:

  • Semiconductor physics
  • Materials science
  • Nanotechnology

Background:

  • InGaAs/InAlAs heterostructures are crucial for high-speed electronic devices.
  • Quantum wires offer unique electronic properties due to quantum confinement.
  • Understanding electron transport in nanostructures is key for device optimization.

Purpose of the Study:

  • To investigate the influence of self-assembled InAs quantum wires on electron mobility in InGaAs/InAlAs heterostructures.
  • To quantify the asymmetry in electron mobility along different directions relative to the quantum wires.
  • To elucidate the scattering mechanisms responsible for the observed mobility anisotropy.

Main Methods:

  • Fabrication of InGaAs/InAlAs heterostructures with embedded InAs quantum wires.
  • Low-temperature electrical transport measurements.
  • Anisotropic mobility analysis based on electron conduction direction.

Main Results:

  • Observed strong asymmetry in electron mobility in the heterostructure.
  • Electron mobility parallel to the InAs quantum wires was significantly higher than perpendicular mobility.
  • The presence of quantum wires near the interface strongly modulated electron conduction.

Conclusions:

  • Self-assembled InAs quantum wires induce significant directional dependence in electron mobility.
  • The observed asymmetry is attributed to the differing scattering cross-sections of the quantum wires for parallel and perpendicular electron motion.
  • This finding has implications for designing advanced semiconductor devices utilizing quantum wire architectures.