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Updated: May 31, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using
Kyle A Ritter1, Joseph W Lyding
1Beckman Institute for Advanced Science and Technology, University of Illinois, 405 North Mathews Avenue, Urbana, IL 61801-2325, USA. Department of Materials Science and Engineering, University of Illinois, 1304 West Green Street, Urbana, IL 61801-2920, USA.
Abstract:
We have developed a method for depositing graphene monolayers and bilayers with minimum lateral dimensions of 2-10 nm by the mechanical exfoliation of graphite onto the Si(100)-2 × 1:H surface. Room temperature, ultrahigh vacuum tunneling spectroscopy measurements of nanometer-sized single layer graphene reveal a size-dependent energy gap ranging from 0.1 to 1 eV. Furthermore, the number of graphene layers can be directly determined from scanning tunneling microscopy topographic contours. This atomistic study provides an experimental basis for probing the electronic structure of nanometer-sized graphene which can assist the development of graphene-based nanoelectronics.
