Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

Modeling of Diode Forward Characteristics

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Prognosis Prediction and Shared Decision Making for Personalised Anticoagulant Therapy after Unprovoked Venous Thromboembolism: The MORPHEUS project.

Thrombosis and haemostasis·2026

Same author

YEARS Algorithm for Diagnosis of Suspected Pulmonary Embolism in Patients With Cancer: A Randomized Clinical Trial.

JAMA·2026

Same author

Prognostic Significance of Electrocardiographic Findings in Hemodynamically Stable Patients With Acute Pulmonary Embolism: Insights From the RIETE Registry.

Archivos de bronconeumologia·2026

Same author

A simple score to identify the sickest normotensive patients with acute pulmonary embolism.

ERJ open research·2026

Same author

Development and external validation of an international score to predict cancer 1 year after venous thromboembolism.

European journal of internal medicine·2026

Same author

Fatal Pulmonary Embolism in Professional Athletes: A Window Into a Broader VTE Problem.

Journal of the American College of Cardiology·2026

Search research articles

Related Experiment Video

Updated: May 31, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

A current-voltage model for Schottky-barrier graphene-based transistors.

David Jiménez¹

¹Departament d'Enginyeria Electrònica, Escola Tècnica Superior d'Enginyeria, Universitat Autònoma de Barcelona, E-08193 Bellaterra, Barcelona, Spain.

|July 7, 2011

Summary

A new computational model accurately simulates graphene nanoribbon (GNR) field effect transistors (FETs) quickly on a personal computer. It simplifies calculations by bypassing self-consistent methods, offering efficient device analysis.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Related Experiment Videos

Last Updated: May 31, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Area of Science:

Computational physics
Materials science
Nanoelectronics

Background:

Graphene nanoribbon field-effect transistors (GNR FETs) are crucial for next-generation electronics.
Accurate and efficient modeling of GNR FETs is essential for device design and optimization.
Existing methods, like non-equilibrium Green's functions (NEGF), can be computationally intensive.

Purpose of the Study:

To develop a low-complexity computational model for simulating GNR FET current-voltage characteristics.
To enable rapid device simulations on standard personal computers.
To provide an accurate alternative to complex self-consistent methods.

Main Methods:

Developed a simplified model by analytically solving Laplace's equation for the electrostatic potential, bypassing self-consistent calculations for quantum capacitance controlled devices.
Incorporated both Schottky barrier (SB) tunneling current and thermionic current.
Validated the model against the self-consistent NEGF method.

Main Results:

The model achieves high accuracy comparable to NEGF.
Simulations of hundreds of data points are completed within seconds on a personal computer.
The model effectively captures the influence of various physical and electrical parameters.

Conclusions:

The presented low-complexity model offers an efficient and accurate approach for simulating GNR FETs.
This model can significantly accelerate the design and analysis of GNR-based electronic devices.
It provides a practical tool for researchers and engineers working with GNR FET technology.