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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
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Single-photon emitting diode based on a quantum dot in a micro-pillar.

T Farrow1, P See, A J Bennett

  • 1Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, UK. Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE, UK.

Nanotechnology
|July 7, 2011
PubMed
Summary

We developed a single-photon diode using quantum dots in a micro-pillar cavity. This device achieves efficient single-photon emission, confirmed by photon anti-bunching measurements.

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Area of Science:

  • Quantum optics
  • Solid-state physics
  • Nanophotonics

Background:

  • Single-photon sources are crucial for quantum technologies.
  • Quantum dots offer tunable optical properties for light emission.
  • Micro-pillar cavities enhance light-matter interactions.

Purpose of the Study:

  • To fabricate and characterize a single-photon emitting diode.
  • To demonstrate efficient single-photon emission from a quantum dot device.
  • To investigate the performance of the device for quantum applications.

Main Methods:

  • Fabrication of a quantum dot in a micro-pillar cavity.
  • Temperature tuning of quantum dot emission into cavity resonance.
  • Electroluminescence and autocorrelation measurements.

Main Results:

  • Enhanced collected photon intensity at 40 K when dot emission is resonant with the cavity mode.
  • Observation of photon anti-bunching in electroluminescence, indicating single-photon emission.
  • Achieved g((2))(0) = 0.17 due to low device resistance and capacitance enabling short current pulses.

Conclusions:

  • The fabricated device functions as an efficient single-photon source.
  • The quantum dot micro-pillar cavity design enhances photon collection.
  • The device shows potential for practical quantum information processing applications.