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Three-Dimensional Analysis of Strain

Three-Dimensional Analysis of Strain

Three-dimensional strain analysis is crucial for understanding how materials deform under stress, particularly in elastic, homogeneous materials. This method employs principal stress axes to simplify complex stress states into more understandable forms. Subjected to stress, a small cubic element within a material either expands or contracts along these axes, transforming into a rectangular parallelepiped. This transformation effectively illustrates the material's deformation. The principal...

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When analyzing elongated structures like bars subjected to uniformly distributed loads, it is essential to understand the transformation of plane strain when coordinate axes are rotated. This transformation helps to assess how material deformation characteristics vary with orientation, which is crucial in materials science and structural engineering.
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Measurements of Strain

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Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain gauge...

Stress-Strain Diagram

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A stress-strain diagram is a crucial tool that graphically displays a material's mechanical characteristics. This diagram is derived from a tensile test performed on a carefully prepared cylindrical specimen. The specimen has two gauge marks inscribed on its central part, and the distance between these marks is known as the gauge length. The cylindrical specimen is placed in a testing machine, which applies an increasing centric load. As this load grows, so does the gauge length. This change in...

Normal Strain under Axial Loading

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Normal strain under axial loading is an important concept in the field of mechanics of materials. Axial loading implies the application of a force along the axis of a material, like a column or bar. This force can either compress or stretch the material. In the context of axial loading, normal strain is the deformation experienced by the material in the direction of the loading force. It's calculated as the change in length divided by the original length of the material. This unitless ratio...

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Related Experiment Video

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Using Digital Image Correlation to Characterize Local Strains on Vascular Tissue Specimens

Using Digital Image Correlation to Characterize Local Strains on Vascular Tissue Specimens

Published on: January 24, 2016

Evaluation of two-dimensional strain distribution by STEM/NBD.

Fumihiko Uesugi¹, Akira Hokazono, Shiro Takeno

¹Toshiba Nanoanalysis Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan. fumihiko.uesugi@toshiba.co.jp

Ultramicroscopy

|July 12, 2011

Summary

This summary is machine-generated.

We developed a new strain mapping technique using electron microscopy to analyze semiconductor devices. This method revealed significant differences in strain distribution within p-MOSFETs based on silicide materials, even with similar external structures.

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Area of Science:

Materials Science
Semiconductor Physics
Electron Microscopy

Background:

Accurate strain measurement is critical for optimizing semiconductor device performance.
Existing techniques may lack the precision to differentiate subtle strain variations.
Understanding strain in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is key to their electrical characteristics.

Purpose of the Study:

To introduce a novel strain mapping technique combining Nano Beam electron Diffraction (NBD), energy filtering (EF), and scanning transmission electron microscopy (STEM).
To investigate and compare strain distributions in the channel regions of p-MOSFETs with different source/drain silicide materials.
To demonstrate the technique's capability in revealing material-dependent strain variations.

Main Methods:

Utilized Nano Beam electron Diffraction (NBD) for acquiring diffraction patterns.
Integrated an energy filter (EF) to remove inelastic scattering, enhancing signal clarity.
Employed scanning transmission electron microscopy (STEM) for precise positioning of diffraction pattern acquisition.
Developed novel numerical processing for accurate measurement of diffraction disk distances.

Main Results:

Successfully measured strain distributions in two types of p-MOSFETs with varying silicide materials.
Confirmed distinct strain distribution differences in the channel regions of the analyzed MOSFETs.
Demonstrated that silicide material significantly impacts strain distribution, despite similar external device appearances.

Conclusions:

The proposed NBD-EF-STEM technique offers enhanced accuracy for strain mapping in semiconductor devices.
Silicide material choice in source/drain regions critically influences channel strain in p-MOSFETs.
This method provides valuable insights into microstructural strain variations crucial for device engineering.