Imaging with low-voltage scanning transmission electron microscopy: a quantitative analysis

A dedicated specimen holder has been designed to perform low-voltage scanning transmission electron microscopy in dark field mode. Different test samples, namely InGaAs/GaAs quantum wells, InGaAs nanowires and thick InGaAs layers, have been analysed to test the reliability of the model based on the proportionality to the specimen mass-thickness, generally used for image intensity interpretation of scattering contrast processes. We found that size of the probe, absorption and channelling must be taken into account to give a quantitative interpretation of image intensity. We develop a simple procedure to evaluate the probe-size effect and to obtain a quantitative indication of the absorption coefficient. Possible artefacts induced by channelling are pointed out. With the developed procedure, the low voltage approach can be successfully applied for quantitative compositional analysis. The method is then applied to the estimation of the In content in the core of InGaAs/GaAs core-shell nanowires.