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Related Concept Videos

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
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A Machine-Vision Approach to Transmission Electron Microscopy Workflows, Results Analysis and Data Management
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Imaging with low-voltage scanning transmission electron microscopy: a quantitative analysis.

L Felisari1, V Grillo, F Jabeen

  • 1TASC, INFM-CNR, S.S. 14, km 163.5, 34149 Trieste, Italy.

Ultramicroscopy
|July 12, 2011
PubMed
Summary

This study introduces a new method for quantitative analysis using low-voltage scanning transmission electron microscopy (LVSTEM) in dark field mode. The findings enable accurate compositional analysis of materials like Indium Gallium Arsenide (InGaAs) nanowires.

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Preparation and Observation of Thick Biological Samples by Scanning Transmission Electron Tomography
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Preparation and Observation of Thick Biological Samples by Scanning Transmission Electron Tomography
08:04

Preparation and Observation of Thick Biological Samples by Scanning Transmission Electron Tomography

Published on: March 12, 2017

Area of Science:

  • Materials Science
  • Nanotechnology
  • Electron Microscopy

Background:

  • Quantitative interpretation of scattering contrast in electron microscopy typically relies on mass-thickness proportionality.
  • Low-voltage scanning transmission electron microscopy (LVSTEM) offers potential for detailed material analysis but requires refined interpretation models.

Purpose of the Study:

  • To develop and validate a quantitative analysis method using LVSTEM in dark field mode.
  • To assess the reliability of standard models for image intensity interpretation in LVSTEM.
  • To enable accurate compositional analysis of nanostructures.

Main Methods:

  • Design of a dedicated specimen holder for LVSTEM dark field imaging.
  • Analysis of InGaAs/GaAs quantum wells, InGaAs nanowires, and InGaAs layers.
  • Development of a procedure to account for probe size, absorption, and channelling effects.

Main Results:

  • Standard mass-thickness proportionality is insufficient for quantitative LVSTEM interpretation.
  • Probe size, absorption, and channelling significantly influence image intensity.
  • A new procedure allows for quantitative compositional analysis, including In content estimation in InGaAs/GaAs nanowires.

Conclusions:

  • LVSTEM in dark field mode, with the developed procedure, enables reliable quantitative compositional analysis.
  • The method overcomes limitations of traditional models by incorporating key physical parameters.
  • Accurate In content determination in InGaAs/GaAs core-shell nanowires is demonstrated.